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0150CT 1N749A4 DS4106AN SP08A 78S75CV CGY52 VCO55BE NJM3771D
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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA969
DESCRIPTION With TO-66 package Complement to type 2SC2239 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications
PINNING(See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 1.5 TC=25ae 25 150 -55~150 ae ae UNIT V V V A A W
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-500mA; IB=-50mA IC=-500mA ; VCE=-5V VCB=-160V ;IE=0 VEB=-5V; IC=0 IC=-100mA ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=10V 70 30 100 MIN -160 -5 TYP.
2SA969
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT
MAX
UNIT V V
-1.5 -1.0 -1.0 -1.0 240 |I |I
V V A A
pF MHz
hFE Classifications O 70-140 Y 120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA969
Fig.2 Outline dimensions
3


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