|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
JMnic Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION With TO-66 package Complement to type 2SC2239 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING(See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 1.5 TC=25ae 25 150 -55~150 ae ae UNIT V V V A A W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-500mA; IB=-50mA IC=-500mA ; VCE=-5V VCB=-160V ;IE=0 VEB=-5V; IC=0 IC=-100mA ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=10V 70 30 100 MIN -160 -5 TYP. 2SA969 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT MAX UNIT V V -1.5 -1.0 -1.0 -1.0 240 |I |I V V A A pF MHz hFE Classifications O 70-140 Y 120-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA969 Fig.2 Outline dimensions 3 |
Price & Availability of 2SA969 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |